Semiconductor Epitaxy Technology
Innovative development of ZnSe blue-ray laser and GaN UV detector via MBE and MOCVD.
• MBE system integrated with both III-V and II-VI compounds, capable of epitaxy for
multiple materials
• III-V optoelectronic devices with wavelength ranging from UV to IR
• Precisely controlled thickness and quality for thin film processing
• Applicable to LEDs, semiconductor laser diodes, and various detectors.