Silicon Carbide Single Crystal
NCSIST has developed single crystal growth techniques and power electronic components which exhibit the following outstanding features.
• High chemical stability in corrosive environment with high reliability
• High thermal conductivity suitable for high temperature environment
• High operational temperature that simplifies cooling system and lowers system cost
• High voltage resistant for high power and high voltage components
• Well-developed 2-inch single crystal growth technique and apparatus; 4-inch single
crystal in development
• Potential applications in high power components, high brightness LED and high
frequency microwave components