Infrared Focal Plane Array Detector
Infrared Focal Plane Array Detectors are sensing devices that convert incident infrared radiation into electrical signals. Their operation principle is based on the absorption of infrared photons at different wavelengths by semiconductor materials, which generates charge carriers or resistance changes. These signals are subsequently processed by a readout integrated circuit (ROIC) to produce interpretable electrical signals or images. The institute’s infrared detection technologies cover three major material systems：InGaAs, T2SL, and InSb. The institute possesses full manufacturing capability ranging from epitaxial growth and device fabrication to metal interconnection and three-dimensional vertical stacking processes, enabling volume production. The developed products support multiple spectral bands, including the Mid-wave infrared (MWIR, 3-5um), short-wave infrared (SWIR, 0.9um-1.55um), and are widely used in military surveillance, night vision systems, thermal imaging, and industrial inspection applications. With continuous advances in semiconductor processing and material engineering, modern infrared detectors have achieved high resolution(1280X1024), small pixel pitch(12um), low power consumption, and are increasingly evolving toward multispectral detection capabilities. In the future, infrared detectors are expected to play an even more critical role in national defense security and space exploration applications.