Semiconductor Epitaxy Technology
Epitaxial growth of optoelectronic semiconductor components is performed using Molecular Beam Epitaxy(MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) systems.
◆MBE：
■III-V Epitaxy systems：Capable of simultaneous epitaxial growth for a wide variety of device materials.
■Precision Control：Achieving precise control over the thickness and quality of superlattices.
◆MOCVD：
■GaN/AlGaN heterostructure Services： Epitaxial growth technology for Gallium Nitride(GaN) and Aluminum Gallium Nitride(AlGaN) on Silicon Carbide(SiC),Sapphire, and Silicon wafer.